A ZnO nanostructured Extended-Gate Field-Effect Transistor (EGFET) has been developed as a pH sensor using well-established microfabrication techniques. ZnO nanostructured sensing film was deposited using RF reactive sputtering technique, which is a standard process, and has better yield and repeatability than the sol–gel and other deposition processes. The ZnO-EGFET device was fabricated using a two-mask process. It has been characterized morphologically and compositionally by using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and energy dispersive X-ray analysis (EDAX), respectively. FESEM and XRD have confirmed the nanophase of the ZnO film. ZnO-EGFET is electrically characterized as a pH sensor. Experimental tests devoted to determine the EGFET sensitivity have shown a non-Nernstian response.

RF-Sputtered, Nanostructured ZnO-Based Extended-Gate Field-Effect Transistor as pH Sensor

Adami, Andrea;Lorenzelli, Leandro;Zen, Mario
2015

Abstract

A ZnO nanostructured Extended-Gate Field-Effect Transistor (EGFET) has been developed as a pH sensor using well-established microfabrication techniques. ZnO nanostructured sensing film was deposited using RF reactive sputtering technique, which is a standard process, and has better yield and repeatability than the sol–gel and other deposition processes. The ZnO-EGFET device was fabricated using a two-mask process. It has been characterized morphologically and compositionally by using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and energy dispersive X-ray analysis (EDAX), respectively. FESEM and XRD have confirmed the nanophase of the ZnO film. ZnO-EGFET is electrically characterized as a pH sensor. Experimental tests devoted to determine the EGFET sensitivity have shown a non-Nernstian response.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/300167
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