Novel Chemoresistive Sensors for Indoor CO2 Monitoring: Validation in an Operational Environment
2024-01-01 Magoni, Marco; Rossi, Arianna; Tralli, Francesco; Bernardoni, Paolo; Fabbri, Barbara; Gaiardo, Andrea; Gherardi, Sandro; Guidi, Vincenzo
A Tuned Lightweight Estimation Algorithm for Low-Cost Phasor Measurement Units
2018-01-01 Tosato, Pietro; Macii, David; Luiso, Mario; Brunelli, Davide; Gallo, Daniele; Landi, Carmine
A Low-Voltage Measurement Testbed for Metrological Characterization of Algorithms for Phasor Measurement Units
2018-01-01 Luiso, Mario; Macii, David; Tosato, Pietro; Brunelli, Davide; Gallo, Daniele; Landi, Carmine
A Radio-Triggered Wireless Sensor Platform Powered by Soil Bacteria
2017-01-01 Brunelli, Davide; Rossi, Maurizio; Tosato, Pietro
Third density and acoustic virial coefficients of helium isotopologues from ab initio calculations
2024-01-01 Binosi, Daniele; Garberoglio, Giovanni; Harvey, Allan H.
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020-01-01 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias
2019-01-01 Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M.
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
2018-01-01 Ruzzarin, M.; Meneghini, M.; De Santi, C.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs
2016-01-01 Meneghini, M.; Rossetto, I.; Bisi, D.; Ruzzarin, M.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E.
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
2016-01-01 Rossetto, I.; Meneghini, M.; Rizzato, V.; Ruzzarin, M.; Favaron, A.; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T. -L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E.
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress
2018-01-01 Ruzzarin, M.; Meneghini, M.; Barbato, A.; Padovan, V.; Haeberlen, O.; Silvestri, M.; Detzel, T.; Meneghesso, G.; Zanoni, E.
Degradation Mechanisms of GaN-Based Vertical Devices: A Review
2020-01-01 Meneghini, M.; Fabris, E.; Ruzzarin, M.; De Santi, C.; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Instability of Dynamic- RON and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors
2017-01-01 Ruzzarin, M.; Meneghini, M.; Bisi, D.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E.
Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress
2016-01-01 Ruzzarin, M.; Meneghini, M.; Rossetto, I.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Decoutere, S.; Meneghesso, G.; Zanoni, E.
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator
2020-01-01 Ruzzarin, M.; De Santi, C.; Yu, F.; Fatahilah, M. F.; Strempel, K.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors
2019-01-01 Ge, M.; Ruzzarin, M.; Chen, D.; Lu, H.; Yu, X.; Zhou, J.; De Santi, C.; Zhang, R.; Zheng, Y.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
2019-01-01 Ruzzarin, M.; Meneghini, M.; De Santi, C.; Neviani, A.; Yu, F.; Strempel, K.; Fatahilah, M. F.; Witzigmann, B.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.
Positive and negative threshold voltage instabilities in GaN-based transistors
2018-01-01 Meneghesso, G.; Meneghini, M.; De Santi, C.; Ruzzarin, M.; Zanoni, E.
Exploration of gate trench module for vertical GaN devices
2020-01-01 Ruzzarin, M.; Geens, K.; Borga, M.; Liang, H.; You, S.; Bakeroot, B.; Decoutere, S.; de Santi, C.; Neviani, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Optimizing the integration of renewable energy sources, energy efficiency, and flexibility solutions in a multi-network pharmaceutical industry
2024-01-01 Ghionda, Francesco; Sartori, Alessandro; Liu, Zijie; Mahbub, Md Shahriar; Pilati, Francesco; Brunelli, Matteo; Viesi, Diego
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Novel Chemoresistive Sensors for Indoor CO2 Monitoring: Validation in an Operational Environment | 1-gen-2024 | Magoni, Marco; Rossi, Arianna; Tralli, Francesco; Bernardoni, Paolo; Fabbri, Barbara; Gaiardo, Andrea; Gherardi, Sandro; Guidi, Vincenzo | |
| A Tuned Lightweight Estimation Algorithm for Low-Cost Phasor Measurement Units | 1-gen-2018 | Tosato, Pietro; Macii, David; Luiso, Mario; Brunelli, Davide; Gallo, Daniele; Landi, Carmine | |
| A Low-Voltage Measurement Testbed for Metrological Characterization of Algorithms for Phasor Measurement Units | 1-gen-2018 | Luiso, Mario; Macii, David; Tosato, Pietro; Brunelli, Davide; Gallo, Daniele; Landi, Carmine | |
| A Radio-Triggered Wireless Sensor Platform Powered by Soil Bacteria | 1-gen-2017 | Brunelli, Davide; Rossi, Maurizio; Tosato, Pietro | |
| Third density and acoustic virial coefficients of helium isotopologues from ab initio calculations | 1-gen-2024 | Binosi, Daniele; Garberoglio, Giovanni; Harvey, Allan H. | |
| Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs | 1-gen-2020 | Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M. | |
| Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias | 1-gen-2019 | Ruzzarin, M.; De Santi, C.; Chiocchetta, F.; Sun, M.; Palacios, T.; Zanoni, E.; Meneghesso, G.; Meneghini, M. | |
| Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments | 1-gen-2018 | Ruzzarin, M.; Meneghini, M.; De Santi, C.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E. | |
| Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs | 1-gen-2016 | Meneghini, M.; Rossetto, I.; Bisi, D.; Ruzzarin, M.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. | |
| Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis | 1-gen-2016 | Rossetto, I.; Meneghini, M.; Rizzato, V.; Ruzzarin, M.; Favaron, A.; Stoffels, S.; Van Hove, M.; Posthuma, N.; Wu, T. -L.; Marcon, D.; Decoutere, S.; Meneghesso, G.; Zanoni, E. | |
| Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress | 1-gen-2018 | Ruzzarin, M.; Meneghini, M.; Barbato, A.; Padovan, V.; Haeberlen, O.; Silvestri, M.; Detzel, T.; Meneghesso, G.; Zanoni, E. | |
| Degradation Mechanisms of GaN-Based Vertical Devices: A Review | 1-gen-2020 | Meneghini, M.; Fabris, E.; Ruzzarin, M.; De Santi, C.; Nomoto, K.; Hu, Z.; Li, W.; Gao, X.; Jena, D.; Xing, H. G.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E. | |
| Instability of Dynamic- RON and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors | 1-gen-2017 | Ruzzarin, M.; Meneghini, M.; Bisi, D.; Sun, M.; Palacios, T.; Meneghesso, G.; Zanoni, E. | |
| Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress | 1-gen-2016 | Ruzzarin, M.; Meneghini, M.; Rossetto, I.; Van Hove, M.; Stoffels, S.; Wu, T. -L.; Decoutere, S.; Meneghesso, G.; Zanoni, E. | |
| Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator | 1-gen-2020 | Ruzzarin, M.; De Santi, C.; Yu, F.; Fatahilah, M. F.; Strempel, K.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M. | |
| Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors | 1-gen-2019 | Ge, M.; Ruzzarin, M.; Chen, D.; Lu, H.; Yu, X.; Zhou, J.; De Santi, C.; Zhang, R.; Zheng, Y.; Meneghini, M.; Meneghesso, G.; Zanoni, E. | |
| Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors | 1-gen-2019 | Ruzzarin, M.; Meneghini, M.; De Santi, C.; Neviani, A.; Yu, F.; Strempel, K.; Fatahilah, M. F.; Witzigmann, B.; Wasisto, H. S.; Waag, A.; Meneghesso, G.; Zanoni, E. | |
| Positive and negative threshold voltage instabilities in GaN-based transistors | 1-gen-2018 | Meneghesso, G.; Meneghini, M.; De Santi, C.; Ruzzarin, M.; Zanoni, E. | |
| Exploration of gate trench module for vertical GaN devices | 1-gen-2020 | Ruzzarin, M.; Geens, K.; Borga, M.; Liang, H.; You, S.; Bakeroot, B.; Decoutere, S.; de Santi, C.; Neviani, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E. | |
| Optimizing the integration of renewable energy sources, energy efficiency, and flexibility solutions in a multi-network pharmaceutical industry | 1-gen-2024 | Ghionda, Francesco; Sartori, Alessandro; Liu, Zijie; Mahbub, Md Shahriar; Pilati, Francesco; Brunelli, Matteo; Viesi, Diego |
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