Electrical characterization of oxide-silicon and nitroxide-silicon interfaces has been extensively carried out by deep level transient spectroscopy and capacitance-voltage techniques. These techniques have been applied to the study of the nitroxide-silicon interface in order to get a better understanding of the potential and limits of the nitroxide films as gate dielectrics for VLSI devices. The experimental results indicate that the nitridation process of thermally grown oxides significantly increases the flat-band voltage, the oxide charge and the interface-state density. These drawbacks have to be overcome if the potential of nitroxides as VLSI gate dielectrics is to be fully exploited.

Surface state characterization at the oxide-silicon and nitroxide-silicon interfaces

Soncini, Giovanni;Zen, Mario;Zorzi, Nicola
1990

Abstract

Electrical characterization of oxide-silicon and nitroxide-silicon interfaces has been extensively carried out by deep level transient spectroscopy and capacitance-voltage techniques. These techniques have been applied to the study of the nitroxide-silicon interface in order to get a better understanding of the potential and limits of the nitroxide films as gate dielectrics for VLSI devices. The experimental results indicate that the nitridation process of thermally grown oxides significantly increases the flat-band voltage, the oxide charge and the interface-state density. These drawbacks have to be overcome if the potential of nitroxides as VLSI gate dielectrics is to be fully exploited.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/2906
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