We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μm active-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature.
Low-Noise, Low-Jitter, High Detection Efficiency InGaAs/InP Single-Photon Avalanche Diode
Acerbi, Fabio
2014-01-01
Abstract
We present the performance of a novel InGaAs/InP single-photon avalanche diode (SPAD) with high detection efficiency and low noise thanks to the improvement of Zinc diffusion conditions and the optimization of the vertical structure. The 25-μm active-area diameter detector, operated in gated-mode with ON time of tens of nanoseconds, shows very low dark count rate (few kilo-counts per second at 225 K and 5 V of excess bias), 30% photon detection efficiency at 1550 nm, low afterpulsing, and a timing response with less than 90-ps full-width at half maximum and very fast exponential tail (time constant 60 ps). Therefore, this InGaAs/InP SPAD is among the best ones ever reported in the literature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
