Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance

Fadeyev, V.; Ely, S.; Galloway, Z.; Ngo, J.; Parker, C.; Sadrozinski, H. F. W.; Christophersen, M.; Phlips, B. F.; Pellegrini, G.; Rafi, J. M.; Quirion, D.; Dalla Betta, G. F.; Boscardin, Maurizio; Casse, G.; Gorelov, I.; Hoeferkamp, M.; Metcalfe, J.; Seidel, S.; Gaubas, E.; Ceponis, T.; Vaitkus, J. V.

We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices while maintaining their performance. In this paper we report on two aspects of the current efforts. The first one involves fabrication options for mass production. We describe the automated cleaving tests and a simplified version of SCP post-processing of n-type devices. Another aspect is the radiation resistance of the passivation. We report on the radiation tests of n- and p-type devices with protons and neutrons.

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Titolo:	Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance
Autori:	V. Fadeyev S. Ely Z. Galloway J. Ngo C. Parker H. F. W. Sadrozinski M. Christophersen B. F. Phlips G. Pellegrini J. M. Rafi D. Quirion G. F. Dalla Betta Boscardin, Maurizio G. Casse I. Gorelov M. Hoeferkamp J. Metcalfe S. Seidel E. Gaubas T. Ceponis J. V. Vaitkus mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2014
Rivista:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT
Abstract:	We pursue scribe–cleave–passivate (SCP) technology for making “slim edge” sensors. The goal is to reduce the inactive region at the periphery of the devices while maintaining their performance. In this paper we report on two aspects of the current efforts. The first one involves fabrication options for mass production. We describe the automated cleaving tests and a simplified version of SCP post-processing of n-type devices. Another aspect is the radiation resistance of the passivation. We report on the radiation tests of n- and p-type devices with protons and neutrons.
Handle:	http://hdl.handle.net/11582/241224
Appare nelle tipologie:	1.1 Articolo in rivista

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