This work reports on RF MEMS chip capping to protect sensitive devices by quartz caps having a cavity to enclose MEMS devices and an epoxy film polymer as a sealing ring. Full hermeticity is not possible due to the permeability of polymer but the goal to protect the mobile parts of the devices during dicing and assembling was achieved. Good RF MEMS devices are produced by die-to-die bonding and a reliable fabrication process is defined while wafer-to-wafer process still needs improvement to increase the fabrication yield. In this paper the fabrication process for both die-to-die and wafer-to-wafer 0-level capping is presented. Good adhesion of caps to the substrate is demonstrated by shear tests, while RF measurements on CPW lines indicate a negligible insertion loss increase. Capping of both capacitive and ohmic contact switches is reported showing no loss of functionality but a modification of actuation voltage induced by thermal treatment.

RF-MEMS packaging by using quartz caps and epoxy polymers

Giacomozzi, Flavio;Mulloni, Viviana;Colpo, Sabrina;Faes, Alessandro;Sordo, Guido;Girardi, Stefano
2014

Abstract

This work reports on RF MEMS chip capping to protect sensitive devices by quartz caps having a cavity to enclose MEMS devices and an epoxy film polymer as a sealing ring. Full hermeticity is not possible due to the permeability of polymer but the goal to protect the mobile parts of the devices during dicing and assembling was achieved. Good RF MEMS devices are produced by die-to-die bonding and a reliable fabrication process is defined while wafer-to-wafer process still needs improvement to increase the fabrication yield. In this paper the fabrication process for both die-to-die and wafer-to-wafer 0-level capping is presented. Good adhesion of caps to the substrate is demonstrated by shear tests, while RF measurements on CPW lines indicate a negligible insertion loss increase. Capping of both capacitive and ohmic contact switches is reported showing no loss of functionality but a modification of actuation voltage induced by thermal treatment.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/239220
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact