We present a new silicon integrated-passive-quenched Single-Photon Avalanche Diode (iPQ-SPAD), fabricated at FBK. Unlike common SPADs, they feature the quenching resistor lithographically fabricated close to the detector and they also have a special top-metallization layout which allows a better signal extraction. We characterized the performance of devices with different active area, layout and junction technology, particularly focusing on the timing jitter. We studied the effect of the metallization layout on timing jitter, the differences between two types of technologies and we also compared measurements performed with blue light and near-infrared light. These devices showed a remarkable timing jitter, close to 20 ps full-width at half-maximum.

High Detection Efficiency and Time Resolution integrated-Passive-Quenched Single-Photon Avalanche Diodes

Acerbi, Fabio;Ferri, Alessandro;Gola, Alberto Giacomo;Zorzi, Nicola;Piemonte, Claudio
2014

Abstract

We present a new silicon integrated-passive-quenched Single-Photon Avalanche Diode (iPQ-SPAD), fabricated at FBK. Unlike common SPADs, they feature the quenching resistor lithographically fabricated close to the detector and they also have a special top-metallization layout which allows a better signal extraction. We characterized the performance of devices with different active area, layout and junction technology, particularly focusing on the timing jitter. We studied the effect of the metallization layout on timing jitter, the differences between two types of technologies and we also compared measurements performed with blue light and near-infrared light. These devices showed a remarkable timing jitter, close to 20 ps full-width at half-maximum.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/238021
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