Heavily p-doped monocrystalline silicon wires have been fabricated by employing isotropic Si wet etch and thermal oxidation to achieve a nanometric cross section - a gate - oxide growth and final palladium evaporation made up the MOS junction able to detect hydrogen concentration in air. Several types of wire dimensions have been designed and fabricated: Length ranges from 5 to 70 um; the smallest widths obtained are around 250-300 nm, while the biggest are up to 7 um. Preliminary experimental results show a high signal/noise ratio sensor response to 100 ppm concentration of H2 at room temperature, 1-atm air.
MOS-Junction-Based Nanostructures by Thermal Oxidation of Silicon Wires for Hydrogen Detection
Tibuzzi, Arianna;Margesin, Benno;Decarli, Massimiliano;Zen, Mario;Soncini, Giovanni
2004-01-01
Abstract
Heavily p-doped monocrystalline silicon wires have been fabricated by employing isotropic Si wet etch and thermal oxidation to achieve a nanometric cross section - a gate - oxide growth and final palladium evaporation made up the MOS junction able to detect hydrogen concentration in air. Several types of wire dimensions have been designed and fabricated: Length ranges from 5 to 70 um; the smallest widths obtained are around 250-300 nm, while the biggest are up to 7 um. Preliminary experimental results show a high signal/noise ratio sensor response to 100 ppm concentration of H2 at room temperature, 1-atm air.File in questo prodotto:
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