The temperature stability of the SiPM signal output can be a crucial aspect in many applications. In a typical scenario where the detector is biased at a constant voltage, a temperature fluctuation determines a change in the breakdown voltage and consequently in the applied overvoltage. The latter impacts on all the parameters that determine the output signal such as gain, PDE and correlated noise probability. In this paper we show a detailed analysis of the dependence of these parameters versus the temperature. In particular, we analyze two cases in which the quantity of interest is the integrated charge or the signal amplitude, respectively. The model is applied to a 1x1 mm2 FBK RGB SiPM with 50x50 um2 cells showing a good agreement with the experimental data.

A comprehensive study of temperature stability of Silicon PhotoMultiplier

Ferri, Alessandro;Acerbi, Fabio;Gola, Alberto Giacomo;Paternoster, Giovanni;Piemonte, Claudio;Zorzi, Nicola
2014

Abstract

The temperature stability of the SiPM signal output can be a crucial aspect in many applications. In a typical scenario where the detector is biased at a constant voltage, a temperature fluctuation determines a change in the breakdown voltage and consequently in the applied overvoltage. The latter impacts on all the parameters that determine the output signal such as gain, PDE and correlated noise probability. In this paper we show a detailed analysis of the dependence of these parameters versus the temperature. In particular, we analyze two cases in which the quantity of interest is the integrated charge or the signal amplitude, respectively. The model is applied to a 1x1 mm2 FBK RGB SiPM with 50x50 um2 cells showing a good agreement with the experimental data.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/228620
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