We have recently proposed a novel junction termination structure for silicon radiation detectors, featuring all-p-type multiguard and scribe-line implants, with metal field-plates completely covering the gap between the implanted rings. The structure is intended for detector long-term stability enhancement even in adverse ambient conditions and for fabrication-process simplification. A thorough static characterization, including stability measurements in varying humidity conditions, has been carried out on a variety of samples fabricated at ITC-irst. Comparisons with diodes featuring an n-type implant along the border - or no edge structure at all - have been performed. The new structures show stable behaviour at relatively high bias ~200V, also in the presence of wide humidity changes (1-90%). A good qualitative agreement has been obtained between experimental results and simulation predictions, allowing to gain deep insight into the physical behaviour of the device.
Characterization and TCAD modelling of termination structures for silicon radiation detectors
Boscardin, Maurizio;Dalla Betta, Gian Franco;Gregori, Paolo;Piemonte, Claudio;Rachevskaia, Irina;Ronchin, Sabina;Zorzi, Nicola
2004-01-01
Abstract
We have recently proposed a novel junction termination structure for silicon radiation detectors, featuring all-p-type multiguard and scribe-line implants, with metal field-plates completely covering the gap between the implanted rings. The structure is intended for detector long-term stability enhancement even in adverse ambient conditions and for fabrication-process simplification. A thorough static characterization, including stability measurements in varying humidity conditions, has been carried out on a variety of samples fabricated at ITC-irst. Comparisons with diodes featuring an n-type implant along the border - or no edge structure at all - have been performed. The new structures show stable behaviour at relatively high bias ~200V, also in the presence of wide humidity changes (1-90%). A good qualitative agreement has been obtained between experimental results and simulation predictions, allowing to gain deep insight into the physical behaviour of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
