NPN phototransistors have been fabricated on high-purity silicon substrate. The devices have been produced by ITC-irst in the framework of a National Research Project funded by the Italian Education, University and Research Ministry (MIUR). The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 300-μm thick silicon bulk. Several devices have been investigated. Results with 22 keV X-ray from a 109-Cd radioactive source and visible light irradiation are presented.
High-gain phototransistors on high-resistivity silicon substrate
Boscardin, Maurizio;Dalla Betta, Gian Franco;Piemonte, Claudio;Rachevskaia, Irina;Ronchin, Sabina
2004-01-01
Abstract
NPN phototransistors have been fabricated on high-purity silicon substrate. The devices have been produced by ITC-irst in the framework of a National Research Project funded by the Italian Education, University and Research Ministry (MIUR). The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 300-μm thick silicon bulk. Several devices have been investigated. Results with 22 keV X-ray from a 109-Cd radioactive source and visible light irradiation are presented.File in questo prodotto:
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