We report on the electrical behavior of termination structures for silicon diodes irradiated with high-energy particles. In particular, the analysis is focused on samples featuring an all-P-type (APT) termination structure that has already been proved to yield excellent long-term stability performance. The radiation hardness of these structures is compared to that of more common reference devices. In order to characterize various radia-tion conditions, tests were performed using protons, neutrons, and high-energy electrons with different fluences up to values causing substrate type inversion. We verified that the APT samples remain functional in all the considered situations, their operational limit being comparable to that of the other devices.
Investigation of the Radiation Tolerance of All-P-Type Termination Structures for Silicon Detectors
Piemonte, Claudio;Boscardin, Maurizio;Dalla Betta, Gian Franco;Rachevskaia, Irina;Zorzi, Nicola
2004-01-01
Abstract
We report on the electrical behavior of termination structures for silicon diodes irradiated with high-energy particles. In particular, the analysis is focused on samples featuring an all-P-type (APT) termination structure that has already been proved to yield excellent long-term stability performance. The radiation hardness of these structures is compared to that of more common reference devices. In order to characterize various radia-tion conditions, tests were performed using protons, neutrons, and high-energy electrons with different fluences up to values causing substrate type inversion. We verified that the APT samples remain functional in all the considered situations, their operational limit being comparable to that of the other devices.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
