A novel set of microstructures for on-wafer stress measurement is prensented, based on a lancet principle, with dedicated design for the amnplification of the dimensinal variations indced by the internal stress of the structural material. A tilted arm geometry was adopted in order to maximize the strain induced movement, keeping the design relatively simple and robust and the lancet ont he wafer plane. A set of simulations, as well as an analytical examination of the structure was performed to establish the optimal geometry: different tilt angles were simulated in a range between -200 and 200 MPa internal stress. Test structures were then realized by means of surface micromachining, adopting photoresist as sacrifical layer and electroplated gold as structural layer: the novel gemetry was sided by traditional rotating structures [Sens. Actuators A 37/38 (1993) 256] and wafer curvature measurements to confirm the readout. Plastic regime simulations were adopted to analyze the behavior of the gold structures, based on a stress-strain curve obtained experimentally

Novel Test structures for stress diagnosis in micromechanics

Bagolini, Alvise;Margesin, Benno;Faes, Alessandro;Giacomozzi, Flavio
2004-01-01

Abstract

A novel set of microstructures for on-wafer stress measurement is prensented, based on a lancet principle, with dedicated design for the amnplification of the dimensinal variations indced by the internal stress of the structural material. A tilted arm geometry was adopted in order to maximize the strain induced movement, keeping the design relatively simple and robust and the lancet ont he wafer plane. A set of simulations, as well as an analytical examination of the structure was performed to establish the optimal geometry: different tilt angles were simulated in a range between -200 and 200 MPa internal stress. Test structures were then realized by means of surface micromachining, adopting photoresist as sacrifical layer and electroplated gold as structural layer: the novel gemetry was sided by traditional rotating structures [Sens. Actuators A 37/38 (1993) 256] and wafer curvature measurements to confirm the readout. Plastic regime simulations were adopted to analyze the behavior of the gold structures, based on a stress-strain curve obtained experimentally
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/2178
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