Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means ofa particle beam. A significant improvement ofthe anodic resolution has been obtained by correcting for these systematic deviations.

Correction of dopant concentration fluctuation effects in silicon drift detectors

Piemonte, Claudio;
2001

Abstract

Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means ofa particle beam. A significant improvement ofthe anodic resolution has been obtained by correcting for these systematic deviations.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/21750
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