In the present paper the peculiarities of conductivity of porous silicon are studied. For the first time an attempt is made to describe analytically the dependence of porous silicon conductivity on material porosity. It is found that the conductivity is mainly crystalline for porosities much lower than the percolation threshold at 57%, while a fractal behavior is observed at porosities near percolation threshold. For higher values of porosities, the conductivity turns smoothly into a quasi-one-dimensional hopping. The reduction of the electrical current flow channels dimension from 3 to 1 for lower temperatures, described by the Mott law for amorphous semiconductors, occurs in porous silicon with increasing porosity.
Conductivity mechanisms of porous silicon
Ghulinyan, Mher
2003-01-01
Abstract
In the present paper the peculiarities of conductivity of porous silicon are studied. For the first time an attempt is made to describe analytically the dependence of porous silicon conductivity on material porosity. It is found that the conductivity is mainly crystalline for porosities much lower than the percolation threshold at 57%, while a fractal behavior is observed at porosities near percolation threshold. For higher values of porosities, the conductivity turns smoothly into a quasi-one-dimensional hopping. The reduction of the electrical current flow channels dimension from 3 to 1 for lower temperatures, described by the Mott law for amorphous semiconductors, occurs in porous silicon with increasing porosity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
