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EnglishThe electrical injection in porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO2. The known effect is an injection increase associated to NO2. We show experimentally a strong correlation between two structural properties and the sensitivity of electrical injection to NO2. The first property is the microstructure, i.e. the pore morphology at nm scale. A structure with straight, elongated pores shows large sensitivity, as opposed to a branching structure. The second property is the layer thickness, which determines the sign of the effect of NO2. If the thickness is sufficiently low – of the order of few μm – the injection in presence of NO2 decreases, instead of increasing.
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| Titolo: | Role of microstructure and layer thickness in porous silicon conductometric gas sensors | |
| Autori: | ||
| Data di pubblicazione: | 2005 | |
| Rivista: | ||
| Abstract: | The electrical injection in porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO2. The known effect is an injection increase associated to NO2. We show experimentally a strong correlation between two structural properties and the sensitivity of electrical injection to NO2. The first property is the microstructure, i.e. the pore morphology at nm scale. A structure with straight, elongated pores shows large sensitivity, as opposed to a branching structure. The second property is the layer thickness, which determines the sign of the effect of NO2. If the thickness is sufficiently low – of the order of few μm – the injection in presence of NO2 decreases, instead of increasing. | |
| Handle: | http://hdl.handle.net/11582/20029 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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