'On-chip' electronics fabricated on 6 Kcm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFET’s and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary set-ups with PIN diodes and tetrode n-JFET’s are successfully tested. Whit about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 s shaping time is obtained. With about e pF, 60 rms electrons at 298 K with 10 s are obtained
Charge Preamplifier for Hole Collecting PIN Diode and Integrated Tetrode N-JFET
Dalla Betta, Gian Franco;Boscardin, Maurizio;
2000-01-01
Abstract
'On-chip' electronics fabricated on 6 Kcm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFET’s and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary set-ups with PIN diodes and tetrode n-JFET’s are successfully tested. Whit about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 s shaping time is obtained. With about e pF, 60 rms electrons at 298 K with 10 s are obtainedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
