'On-chip' electronics fabricated on 6 Kcm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFET’s and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary set-ups with PIN diodes and tetrode n-JFET’s are successfully tested. Whit about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 s shaping time is obtained. With about e pF, 60 rms electrons at 298 K with 10 s are obtained

Charge Preamplifier for Hole Collecting PIN Diode and Integrated Tetrode N-JFET

Dalla Betta, Gian Franco;Boscardin, Maurizio;
2000

Abstract

'On-chip' electronics fabricated on 6 Kcm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFET’s and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary set-ups with PIN diodes and tetrode n-JFET’s are successfully tested. Whit about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 s shaping time is obtained. With about e pF, 60 rms electrons at 298 K with 10 s are obtained
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1966
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