Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors

We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO2 interface.

Titolo: Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors
Autori: 
Giacomini, Gabriele
Rachevskaia, Irina
mostra contributor esterni 
Data di pubblicazione: 2013
Rivista: 
IEEE TRANSACTIONS ON NUCLEAR SCIENCE  
Abstract: We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO2 interface.
Handle: http://hdl.handle.net/11582/183811
Appare nelle tipologie:1.1 Articolo in rivista

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http://hdl.handle.net/11582/183811
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