We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO2 interface.
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Titolo: | Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors |
Autori: | |
Data di pubblicazione: | 2013 |
Rivista: | |
Abstract: | We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO2 interface. |
Handle: | http://hdl.handle.net/11582/183811 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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