We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO2 interface.

Measurement of Johnson Noise Induced by p-Stops in Silicon Microstrip Detectors

Giacomini, Gabriele;Rachevskaia, Irina
2013

Abstract

We report on noise measurements performed on the n-side of double-sided, AC-coupled, punch-through biased silicon strip detectors. The noise has been measured over a wide range of peaking times and bias voltages, allowing the disentanglement of two excess noise terms, one related to the p-stops surrounding the strips and the other related to the electron accumulation layer at the Si/SiO2 interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/183811
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