We report on a study of the compositional and chemical properties of films deposited on silicon by quadrupoled Nd:YAG pulsed laser ablation of a ceramic AlN target. The ablation has been performed either in a vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the aluminium 2p, nitrogen 1s and oxygen 1s core electrons indicate the formation of near-stoichiometric aluminum nitride in films grown under vacuum (10-7 - 10-5 mb) while in films grown under 0.1 mbar oxygen partial pressure only aluminum oxide formation was observed

Chemical structure of films grown by AIN laser ablation: an X-ray photoelectron spectroscopy study

Bensaada Laidani, Nadhira;Vanzetti, Lia Emanuela;Anderle, Mariano;
1999

Abstract

We report on a study of the compositional and chemical properties of films deposited on silicon by quadrupoled Nd:YAG pulsed laser ablation of a ceramic AlN target. The ablation has been performed either in a vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the aluminium 2p, nitrogen 1s and oxygen 1s core electrons indicate the formation of near-stoichiometric aluminum nitride in films grown under vacuum (10-7 - 10-5 mb) while in films grown under 0.1 mbar oxygen partial pressure only aluminum oxide formation was observed
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1823
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact