The charging of the dielectric used for the actuation in microelectromechanical system (MEMS) devices is one of the major failure sources for switches based on this technology. For this reason, a better understanding of such an effect is vital to improve the reliability for both ground and space applications. In this paper, the expected response of MEMS switches to unipolar and bipolar dc actuation voltages has been measured and modeled. Two configurations of MEMS switches, namely, an Ohmic series and a shunt capacitive one designed for microwave applications, have been studied as a test vehicle for charging effects related to the dc actuation pads. The recorded data have been interpreted mainly through the Poole–Frenkel effect due to charge injection when a high voltage is applied to the dielectric layer. Metal-Insulator-Metal sMIMd structures have been also considered as a complementary information for the response of the dielectric material.

Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches

Margesin, Benno;Giacomozzi, Flavio;
2009

Abstract

The charging of the dielectric used for the actuation in microelectromechanical system (MEMS) devices is one of the major failure sources for switches based on this technology. For this reason, a better understanding of such an effect is vital to improve the reliability for both ground and space applications. In this paper, the expected response of MEMS switches to unipolar and bipolar dc actuation voltages has been measured and modeled. Two configurations of MEMS switches, namely, an Ohmic series and a shunt capacitive one designed for microwave applications, have been studied as a test vehicle for charging effects related to the dc actuation pads. The recorded data have been interpreted mainly through the Poole–Frenkel effect due to charge injection when a high voltage is applied to the dielectric layer. Metal-Insulator-Metal sMIMd structures have been also considered as a complementary information for the response of the dielectric material.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/17829
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact