The recent progresses accomplished in our research group are here presented: 1) Porous silicon micro-cavities (PSMSs) were formed on p type doped (6 to 9 omega cm) substrates with very narrow bandwidth (6nm) and a good ratio of the peak to background emission, reaching at the same time a high emission quantum efficiency. 2) Light emitting diodes based on n-type doped silicon/porous silicon (PS) heterojunctions. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. Anodic oxidation experiments show further improvements in the LED efficiency. 3) SiO2/Si/SiO2-quantum wells with room temperature efficient light emission in the visible range. We report here on the preparation and photoluminescence properties of thin SiO2/Si layers obtained by low pressure chemical vapor phase deposition and thermal oxidation processes. The growth technique is fully compatible with standard VLSI CMOS technology

Porous Silicon Optical Devices and Si/SiO2 Quantum Wells: Recent Results

Mulloni, Viviana;Pucker, Georg;Bellutti, Pierluigi
2000-01-01

Abstract

The recent progresses accomplished in our research group are here presented: 1) Porous silicon micro-cavities (PSMSs) were formed on p type doped (6 to 9 omega cm) substrates with very narrow bandwidth (6nm) and a good ratio of the peak to background emission, reaching at the same time a high emission quantum efficiency. 2) Light emitting diodes based on n-type doped silicon/porous silicon (PS) heterojunctions. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. Anodic oxidation experiments show further improvements in the LED efficiency. 3) SiO2/Si/SiO2-quantum wells with room temperature efficient light emission in the visible range. We report here on the preparation and photoluminescence properties of thin SiO2/Si layers obtained by low pressure chemical vapor phase deposition and thermal oxidation processes. The growth technique is fully compatible with standard VLSI CMOS technology
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1775
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