We have fabricated and characterized Si-implanted thermistors to be used as phonon sensors in very-low-temperature, single-quantum detectors. After a short review of the required thermistor properties for this type of application, a detailed description of the production process and of the characterization experimental techniques is reported. The data show that the resistivity-temperature behaviour of all the devices follows the prediction of the variable range hopping conduction model in the investigated temperature range (4.2-0.03 K). Phonon-electron decoupling and excess low-frequency noise show up at low temperatures, reducing the thermistor sensitivity. These phenomena are discussed and conveniently parametrized in view of a complete detector optimization

Fabrication and low-temperature characterization of Si-implanted thermistors

Ferrario, Lorenza;Margesin, Benno;
1999-01-01

Abstract

We have fabricated and characterized Si-implanted thermistors to be used as phonon sensors in very-low-temperature, single-quantum detectors. After a short review of the required thermistor properties for this type of application, a detailed description of the production process and of the characterization experimental techniques is reported. The data show that the resistivity-temperature behaviour of all the devices follows the prediction of the variable range hopping conduction model in the investigated temperature range (4.2-0.03 K). Phonon-electron decoupling and excess low-frequency noise show up at low temperatures, reducing the thermistor sensitivity. These phenomena are discussed and conveniently parametrized in view of a complete detector optimization
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1753
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