A compact, analytical model is derived for the n-side interstrip resistance of double-sided silicon microstrip detectors, allowing for fast and accurate prediction of the minimum p-stop (or p-spray) implant dose ensuring adequate interstrip isolation. The basic idea on which the proposed model relies is that the portion of the detector between two adjacent n-strips can effectively be reduced to an equivalent n-channel MOSFET. The interstrip resistance can be evaluated as the output resistance of this equivalent MOSFET using standard SPICE-like models. The influence of radiation-induced oxide charge and p-stop (or p-spray) voltage can be accounted for, by simply including into the threshold voltage expression, the induced flat-band voltage shift and body-effect term, respectively
Analytical Model for the Ohmic-Side Interstrip Resistance of Double-Sided Silicon Microstrip Detectors
Dalla Betta, Gian Franco;
2001-01-01
Abstract
A compact, analytical model is derived for the n-side interstrip resistance of double-sided silicon microstrip detectors, allowing for fast and accurate prediction of the minimum p-stop (or p-spray) implant dose ensuring adequate interstrip isolation. The basic idea on which the proposed model relies is that the portion of the detector between two adjacent n-strips can effectively be reduced to an equivalent n-channel MOSFET. The interstrip resistance can be evaluated as the output resistance of this equivalent MOSFET using standard SPICE-like models. The influence of radiation-induced oxide charge and p-stop (or p-spray) voltage can be accounted for, by simply including into the threshold voltage expression, the induced flat-band voltage shift and body-effect term, respectivelyI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
