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EnglishWe report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end JFET`s integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gettering prevented carrier lifetime degradation in spite of the relatively-high thermal budget characterizing the fabrication process, allowing very low leakage currents (~ 1 nA/cm2 at full depletion) to be obtained. Results from JFET`s electrical characterization are presented, showing high transconductance and output resistance values as well as low gate currents and input capacitance. JFET`s performance is not affected by the high reverse-bias voltage required for detector operation, making these devices suitable for the fabrication of monolithical preamplifiers integrated on the detector chip.
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| Titolo: | Silicon PIN radiation detectors with on-chip front-end junction field effect transistors | |
| Autori: | ||
| Data di pubblicazione: | 1998 | |
| Rivista: | ||
| Abstract: | We report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end JFET`s integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gettering prevented carrier lifetime degradation in spite of the relatively-high thermal budget characterizing the fabrication process, allowing very low leakage currents (~ 1 nA/cm2 at full depletion) to be obtained. Results from JFET`s electrical characterization are presented, showing high transconductance and output resistance values as well as low gate currents and input capacitance. JFET`s performance is not affected by the high reverse-bias voltage required for detector operation, making these devices suitable for the fabrication of monolithical preamplifiers integrated on the detector chip. | |
| Handle: | http://hdl.handle.net/11582/1715 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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