We report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end JFET`s integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gettering prevented carrier lifetime degradation in spite of the relatively-high thermal budget characterizing the fabrication process, allowing very low leakage currents (~ 1 nA/cm2 at full depletion) to be obtained. Results from JFET`s electrical characterization are presented, showing high transconductance and output resistance values as well as low gate currents and input capacitance. JFET`s performance is not affected by the high reverse-bias voltage required for detector operation, making these devices suitable for the fabrication of monolithical preamplifiers integrated on the detector chip.
Silicon PIN radiation detectors with on-chip front-end junction field effect transistors
Dalla Betta, Gian Franco;Boscardin, Maurizio;Ferrario, Lorenza;Zen, Mario;Soncini, Giovanni
1998
Abstract
We report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end JFET`s integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gettering prevented carrier lifetime degradation in spite of the relatively-high thermal budget characterizing the fabrication process, allowing very low leakage currents (~ 1 nA/cm2 at full depletion) to be obtained. Results from JFET`s electrical characterization are presented, showing high transconductance and output resistance values as well as low gate currents and input capacitance. JFET`s performance is not affected by the high reverse-bias voltage required for detector operation, making these devices suitable for the fabrication of monolithical preamplifiers integrated on the detector chip.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
