We report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end JFET`s integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gettering prevented carrier lifetime degradation in spite of the relatively-high thermal budget characterizing the fabrication process, allowing very low leakage currents (~ 1 nA/cm2 at full depletion) to be obtained. Results from JFET`s electrical characterization are presented, showing high transconductance and output resistance values as well as low gate currents and input capacitance. JFET`s performance is not affected by the high reverse-bias voltage required for detector operation, making these devices suitable for the fabrication of monolithical preamplifiers integrated on the detector chip.

Silicon PIN radiation detectors with on-chip front-end junction field effect transistors

Dalla Betta, Gian Franco;Boscardin, Maurizio;Ferrario, Lorenza;Zen, Mario;Soncini, Giovanni
1998

Abstract

We report on the latest results obtained from the development of a fabrication technology for PIN radiation detectors with on-chip front-end JFET`s integrated on high-resistivity, FZ silicon. P-doped polysilicon back-side gettering prevented carrier lifetime degradation in spite of the relatively-high thermal budget characterizing the fabrication process, allowing very low leakage currents (~ 1 nA/cm2 at full depletion) to be obtained. Results from JFET`s electrical characterization are presented, showing high transconductance and output resistance values as well as low gate currents and input capacitance. JFET`s performance is not affected by the high reverse-bias voltage required for detector operation, making these devices suitable for the fabrication of monolithical preamplifiers integrated on the detector chip.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1715
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact