A thorough characterization of a novel Silicon Photomultiplier technology for Near-UltraViolet (Near-UV) light detection, called NUV-SiPM, is presented. It features a peak detection efficiency of more than 30% in the region between 380 and 400 nm, mainly limited by the fill factor. An accurate electric field engineering allows to have excellent noise properties, with a dark count rate of less than 200 kHz/mm^2 at maximum efficiency and 20 °C. Additionally, a Break-Down Voltage uniformity better than 100 mV at the wafer level and a temperature dependence of 25 mV/°C were obtained. We coupled a 4x4 mm^2 device to a 3x3x5 mm^3 LYSO scintillator obtaining an energy resolution of 10% FWHM with 511keV gamma ray irradiation and a coincidence resolving time between two identical detectors of 210 ps FWHM. A detailed description of these results is presented in the paper.
New Developments of Near-UV SiPMs at FBK
Pro, Tiziana;Ferri, Alessandro;Gola, Alberto Giacomo;Serra, Nicola;Tarolli, Alessandro;Zorzi, Nicola;Piemonte, Claudio
2013-01-01
Abstract
A thorough characterization of a novel Silicon Photomultiplier technology for Near-UltraViolet (Near-UV) light detection, called NUV-SiPM, is presented. It features a peak detection efficiency of more than 30% in the region between 380 and 400 nm, mainly limited by the fill factor. An accurate electric field engineering allows to have excellent noise properties, with a dark count rate of less than 200 kHz/mm^2 at maximum efficiency and 20 °C. Additionally, a Break-Down Voltage uniformity better than 100 mV at the wafer level and a temperature dependence of 25 mV/°C were obtained. We coupled a 4x4 mm^2 device to a 3x3x5 mm^3 LYSO scintillator obtaining an energy resolution of 10% FWHM with 511keV gamma ray irradiation and a coincidence resolving time between two identical detectors of 210 ps FWHM. A detailed description of these results is presented in the paper.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
