A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LE). It is based on an heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. This is thought to be due to a different injection mechanism for which carriers are injected directly into conduction band states. Anodic oxidation experiments show further improvements in the LED efficiency. PACS numbers: 85.30.Vw, 85.60.Jb, 78.55.m, 73.61.C
Light emitting porous silicon diode based on a silicon/porous silicon heterojuction
Bellutti, Pierluigi;Lui, Alberto;
1999-01-01
Abstract
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LE). It is based on an heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. This is thought to be due to a different injection mechanism for which carriers are injected directly into conduction band states. Anodic oxidation experiments show further improvements in the LED efficiency. PACS numbers: 85.30.Vw, 85.60.Jb, 78.55.m, 73.61.CI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
