Formation of the c-BN phase in films obtained by high fluence (6 and 12 J/cm2) KrF excimer laser ablation of an h-BN target in low pressure (5 Pa) N2 atmosphere, without any aid of ion bombardment and substrate heating, is reported. The atomic composition and the chemical states were given by energy dispersive spectroscopy (EDS) and x-ray-photoelectron spectroscopy (XPS), while Fourier-transform infra-red spectroscopy (FT-IR) and x-ray diffraction (XRD) were used to determine the phase structure of the films. The morphology of the films was investigated as well by means of scanning electron microscopy (SEM). The results of such investigations are presented

Cubic Boron Nitride deposition on silicon substrates at room temperature by KrF Excimer Laser Ablation of h-Bm targets

Bensaada Laidani, Nadhira;Speranza, Giorgio;Anderle, Mariano;
2000

Abstract

Formation of the c-BN phase in films obtained by high fluence (6 and 12 J/cm2) KrF excimer laser ablation of an h-BN target in low pressure (5 Pa) N2 atmosphere, without any aid of ion bombardment and substrate heating, is reported. The atomic composition and the chemical states were given by energy dispersive spectroscopy (EDS) and x-ray-photoelectron spectroscopy (XPS), while Fourier-transform infra-red spectroscopy (FT-IR) and x-ray diffraction (XRD) were used to determine the phase structure of the films. The morphology of the films was investigated as well by means of scanning electron microscopy (SEM). The results of such investigations are presented
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1583
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