Dislocation-related photoluminescence at 0.806 and 0.873 e V is observed in erbium-doped silicon epi layers grown by liquid-phase epitaxy on (100) Si wafers. These signals are detected at T = 2 K only on epi layers deposited on Czochralski grown silicon substrates. No luminescence is observed when float zone-grown substrates are used. The peak intensity shows temperature quenching, but the signal remains detectable up to 195 K. The luminescence apparently is due to dislocations in silicon in the simultaneous presence of high oxygen concentration and erbium impurities. A comparison with the typical infrared emission fro erbium-implanted silicon samples is presented
Luminescence from Erbium-Doped Silicon Epi Layers Grown by Liquid-Phase Epitaxy
Bersani, Massimo
1998-01-01
Abstract
Dislocation-related photoluminescence at 0.806 and 0.873 e V is observed in erbium-doped silicon epi layers grown by liquid-phase epitaxy on (100) Si wafers. These signals are detected at T = 2 K only on epi layers deposited on Czochralski grown silicon substrates. No luminescence is observed when float zone-grown substrates are used. The peak intensity shows temperature quenching, but the signal remains detectable up to 195 K. The luminescence apparently is due to dislocations in silicon in the simultaneous presence of high oxygen concentration and erbium impurities. A comparison with the typical infrared emission fro erbium-implanted silicon samples is presentedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
