Gate oxide reliability can be effectively improved by using dry field oxidation instead of the conventional wet one. The obtained improvement is suggested to occur because of a better oxide quality in the active region border due to the absence of the characteristic defects induced by wet local oxidation.
Gate Oxide Reliability Improvement related to Dry Local Oxidation of Silicon
Bellutti, Pierluigi;Zorzi, Nicola;
1999-01-01
Abstract
Gate oxide reliability can be effectively improved by using dry field oxidation instead of the conventional wet one. The obtained improvement is suggested to occur because of a better oxide quality in the active region border due to the absence of the characteristic defects induced by wet local oxidation.File in questo prodotto:
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