By means of capacitance-voltage technique the positive charging of 9 nm thick silicon dioxide after both positive and negative bias Fowler-Nordheim injection has been evaluated. Measurements results allow to distinguish between two types of positive charge depending on their response to gate voltage variation, i.e. trapped holes and anomalous positive charge. These two types of positive charges also show a different location in the oxide. More precisely, trapped holes are characteristics traps of the SiO2/Si interface and can be found only after negative bias stress, while anomalous positive charges are present in both cathodic and anodic oxide regions independently on the stress polarity.
High Electric Field induced positive charges in thin gate oxide
Bellutti, Pierluigi;Zorzi, Nicola
2001-01-01
Abstract
By means of capacitance-voltage technique the positive charging of 9 nm thick silicon dioxide after both positive and negative bias Fowler-Nordheim injection has been evaluated. Measurements results allow to distinguish between two types of positive charge depending on their response to gate voltage variation, i.e. trapped holes and anomalous positive charge. These two types of positive charges also show a different location in the oxide. More precisely, trapped holes are characteristics traps of the SiO2/Si interface and can be found only after negative bias stress, while anomalous positive charges are present in both cathodic and anodic oxide regions independently on the stress polarity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
