We report on the development of a radiation-detector compatible JFET technology on high-resistivity silicon for monolithic integration of detectors and front-end electronics. A dedicated test-chip containing JFET`s, PIN detectors, and other test-structures has been designed and fabricated for process and device characterization. Results from the electrical characterization of a first fabrication run show that good values of detector leakage current (in the order of 1nA/cm$^2$ at 100 $\mu$m depletion width) can be obtained in spite of the relatively high thermal budget characterizing the process. As far as the JFET performance is concerned, a problem of insufficient device isolation at high substrate voltages has been evidenced. A second run is currently being carried on with the aim of optimizing the JFET structure.
Development of a Detector-Compatible JFET Technology on High-Resistivity Silicon
Dalla Betta, Gian Franco;Boscardin, Maurizio;Ferrario, Lorenza;Zen, Mario;Soncini, Giovanni
1998-01-01
Abstract
We report on the development of a radiation-detector compatible JFET technology on high-resistivity silicon for monolithic integration of detectors and front-end electronics. A dedicated test-chip containing JFET`s, PIN detectors, and other test-structures has been designed and fabricated for process and device characterization. Results from the electrical characterization of a first fabrication run show that good values of detector leakage current (in the order of 1nA/cm$^2$ at 100 $\mu$m depletion width) can be obtained in spite of the relatively high thermal budget characterizing the process. As far as the JFET performance is concerned, a problem of insufficient device isolation at high substrate voltages has been evidenced. A second run is currently being carried on with the aim of optimizing the JFET structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
