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EnglishSuperlinear-variation in short circuit photocurrent with increasing incident optical power has been observed in metal-insulator-semiconductor structures having a silicon rich oxinitride active layer containing silicon nanocrystals. A model has been elaborated where an internal gain mechanism explains the superlinear photovoltaic effect. The internal gain mechanism is due to secondary carrier generation SCG from sub-bandgap levels in the nanocrystal. SCG is caused by impact excitation from the photogenerated conduction band electrons. The sub-bandgap levels are associated to traps formed at the dielectric/Si-nanocrystals interface.
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| Titolo: | Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Rivista: | ||
| Abstract: | Superlinear-variation in short circuit photocurrent with increasing incident optical power has been observed in metal-insulator-semiconductor structures having a silicon rich oxinitride active layer containing silicon nanocrystals. A model has been elaborated where an internal gain mechanism explains the superlinear photovoltaic effect. The internal gain mechanism is due to secondary carrier generation SCG from sub-bandgap levels in the nanocrystal. SCG is caused by impact excitation from the photogenerated conduction band electrons. The sub-bandgap levels are associated to traps formed at the dielectric/Si-nanocrystals interface. | |
| Handle: | http://hdl.handle.net/11582/13448 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/11582/13448
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