C-V & I-t analysis of positive charging of 9 nm thick silicon dioxide after both positive and negative bias Fowler-Nordheim injection has been carried out. Measurements results allow to distinguish between two types of positive charge depending on their response to gate voltage variation, i.e. Trapped Holes and Anomalous Positive Charge. The different location of these traps in the oxide can address new insights on their origin.
The effect of stress polarity on positive charging in thin gate oxide
Bellutti, Pierluigi;Zorzi, Nicola
2000-01-01
Abstract
C-V & I-t analysis of positive charging of 9 nm thick silicon dioxide after both positive and negative bias Fowler-Nordheim injection has been carried out. Measurements results allow to distinguish between two types of positive charge depending on their response to gate voltage variation, i.e. Trapped Holes and Anomalous Positive Charge. The different location of these traps in the oxide can address new insights on their origin.File in questo prodotto:
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