PIN diodes and other test structures have been fabricated on both n- and p-type high resistivitiy Floating Zone (FZ) silicon substrates. Different extrinsic-gettering techniques have been adopted to the purpose of meeting the required specification of a detector leakage current density lower than 1 nA/cm2. We have found that phosphorus-doped polysilicon gettering gives the best results on n-type Si, while devices made on p-type substrate exhibited a leakage current density two order of magnitude higher. A proper control of the oxide charge at the silicon-silicon dioxide interface was also found to be crucial in obtaining a predictable behavior of such devices
Si-PIN X-Ray Detector Technology
Dalla Betta, Gian Franco;Boscardin, Maurizio
1997-01-01
Abstract
PIN diodes and other test structures have been fabricated on both n- and p-type high resistivitiy Floating Zone (FZ) silicon substrates. Different extrinsic-gettering techniques have been adopted to the purpose of meeting the required specification of a detector leakage current density lower than 1 nA/cm2. We have found that phosphorus-doped polysilicon gettering gives the best results on n-type Si, while devices made on p-type substrate exhibited a leakage current density two order of magnitude higher. A proper control of the oxide charge at the silicon-silicon dioxide interface was also found to be crucial in obtaining a predictable behavior of such devicesI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
