PIN diodes and other test structures have been fabricated on both n- and p-type high resistivitiy Floating Zone (FZ) silicon substrates. Different extrinsic-gettering techniques have been adopted to the purpose of meeting the required specification of a detector leakage current density lower than 1 nA/cm2. We have found that phosphorus-doped polysilicon gettering gives the best results on n-type Si, while devices made on p-type substrate exhibited a leakage current density two order of magnitude higher. A proper control of the oxide charge at the silicon-silicon dioxide interface was also found to be crucial in obtaining a predictable behavior of such devices

Si-PIN X-Ray Detector Technology

Dalla Betta, Gian Franco;Boscardin, Maurizio
1997-01-01

Abstract

PIN diodes and other test structures have been fabricated on both n- and p-type high resistivitiy Floating Zone (FZ) silicon substrates. Different extrinsic-gettering techniques have been adopted to the purpose of meeting the required specification of a detector leakage current density lower than 1 nA/cm2. We have found that phosphorus-doped polysilicon gettering gives the best results on n-type Si, while devices made on p-type substrate exhibited a leakage current density two order of magnitude higher. A proper control of the oxide charge at the silicon-silicon dioxide interface was also found to be crucial in obtaining a predictable behavior of such devices
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1319
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