We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog signal processor and to increase the area of the sensing electrode. These two new features aim to address some limiting aspects of conventional MAPS, such as the read-out speed and the charge collection efficiency. We report on the characterization of the first prototype chip, in particular the calibration with soft X-rays and the response to β-rays, demonstrating the capability of the sensor in detecting ionizing radiation.

A new approach to the design of monolithic active pixel detectors in 0.13 μm triple well CMOS technology

Ratti, Lodovico;Giacomini, Gabriele;Rachevskaia, Irina;
2006

Abstract

We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog signal processor and to increase the area of the sensing electrode. These two new features aim to address some limiting aspects of conventional MAPS, such as the read-out speed and the charge collection efficiency. We report on the characterization of the first prototype chip, in particular the calibration with soft X-rays and the response to β-rays, demonstrating the capability of the sensor in detecting ionizing radiation.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/12648
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