We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.
A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology
Stoppa, David;
2012-01-01
Abstract
We report on the design and characterization of a novel time-resolved image sensor fabricated in a 130 nm CMOS process. Each pixel within the 3232 pixel array contains a low-noise single-photon detector and a high-precision time-to-digital converter (TDC). The 10-bit TDC exhibits a timing resolution of 119 ps with a timing uniformity across the entire array of less than 2 LSBs. The differential non-linearity (DNL) and integral non-linearity (INL) were measured at ±0.4 and ±1.2 LSBs, respectively. The pixel array was fabricated with a pitch of 50 μm in both directions and with a total TDC area of less than 2000 μm2. The target application for this sensor is time-resolved imaging, in particular fluorescence lifetime imaging microscopy and 3D imaging. The characterization shows the suitability of the proposed sensor technology for these applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
