PIN radiation detectors and other test-structure have been fabricated on FZ high-resistivity (2kWcm, N-type silicon substrate by a planar process that features three different alternative extrinsic-gettering techniques. Extremely low leakage-current values have been measured for these devices, confirming the effectiveness of gettering procedures. In particular, phosphorus-doped polysilicon used as a gettering layer on the back-side of the wafer has provided the best results in terms of leakage-current and generation lifetime values.

A Low Leakage Process for Silicon Radiation Detectors

Boscardin, Maurizio;Dalla Betta, Gian Franco;
1995

Abstract

PIN radiation detectors and other test-structure have been fabricated on FZ high-resistivity (2kWcm, N-type silicon substrate by a planar process that features three different alternative extrinsic-gettering techniques. Extremely low leakage-current values have been measured for these devices, confirming the effectiveness of gettering procedures. In particular, phosphorus-doped polysilicon used as a gettering layer on the back-side of the wafer has provided the best results in terms of leakage-current and generation lifetime values.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1146
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