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Multi-technique characterization of arsenic and boron ultra low energy implants in silicon within the ANNA consortium. 1-gen-2009 Giubertoni, Damiano; Pepponi, Giancarlo; B., Beckhoff; P., Hoenicke; Gennaro, Salvatore; Meirer, Florian; D., Ingerle; G., Steinhauser; M., Fried; P., Petrik; A., Parisini; M. A., Reading; C., Streli; J. A., van den Berg; Bersani, Massimo
Deactivation of sub-melt laser annealed arsenic ultra shallow junctions in silicon during subsequent thermal treatment 1-gen-2009 Giubertoni, Damiano; Pepponi, Giancarlo; M. A., Sahiner; S. P., Kelty; M., Kah; K. J., Kirkby; Meirer, Florian; Gennaro, Salvatore; R., Doherty; M. A., Foad; J. C., Woicik; C., Streli; Bersani, Massimo; P., Pianetta
Ultra shallow Boron junctions in silicon characterization by secondary ion mass spectrometry and synchrotron radiation grazing incidence x-ray fluorescence techniques 1-gen-2009 Giubertoni, Damiano; P., Hoenicke; B., Beckhoff; Pepponi, Giancarlo; Iacob, Erica; Bersani, Massimo
Grazing Incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for characterization of ultra shallow arsenic distribution in silicon. 1-gen-2009 Pepponi, Giancarlo; Meirer, Florian; Giubertoni, Damiano; D., Ingerle; G., Steinhauser; C., Streli; P., Hoenicke; B., Beckhoff; Bersani, Massimo
Characterization of As Implants and Hf Layer with a new Spectrometer for Grazing Incidence XRF 1-gen-2009 C., Streli; D., Ingerle; Meirer, Florian; N., Zoeger; Pepponi, Giancarlo; Giubertoni, Damiano; P., Wobrauschek; C., Streli
Characterization of Junction Activation and Deactivation Using non-Equilibrium 1-gen-2009 Bersani, Massimo; Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; M. A., Sahiner; S. P., Kelty; M., Kah; K. J., Kirkby; R., Doherty; M. A., Foad; Meirer, Florian; C., Streli; J. C., Woicik; P., Piane
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 1-gen-2009 B., Beckhoff; P., Hoenicke; Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo
Analytical Techniques for Semiconductor Materials and Process Characterization 6 (ALTECH 09) 1-gen-2009 B. O., Kolbesen; C., Claeys; L., Fabry; Bersani, Massimo; Giubertoni, Damiano; Pepponi, Giancarlo
Ultra low energy Boron ion implants in silicon analyzed by not-oxydizing O2+ bombardment and synchrotron radiation grazing incidence x-ray fluorescence 1-gen-2009 Giubertoni, Damiano; Iacob, Erica; Pepponi, Giancarlo; Bersani, Massimo; Anderle, Mariano; P., Hoenicke; B., Beckhoff
GIXRF In The Soft X-Ray Range Used For The Characterization Of Ultra Shallow Junctions 1-gen-2009 Burkhard, Beckhoff; P., Hoenicke; Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo
Characterization of junction activation and deactivation using non-equilibrium annealing: Solid phase epitaxy, spike annealing, laser annealing 1-gen-2009 Bersani, Massimo; Pepponi, Giancarlo; Giubertoni, Damiano; Gennaro, Salvatore; Mehmet, Sahiner; Stephen, Kelty; Max, Kah; K. J., Kirkby; Roisin, Doherty; Majeed, Foad; Meirer, Florian; Christina, Streli; Joseph, Woicik; P., Pianetta
Hydrogen diffusion in GaAs1−xNx 1-gen-2009 Rinaldo, Trotta; Giubertoni, Damiano; Antonio, Polimeni; Bersani, Massimo; Mario, Capizzi; F., Martelli; S., Rubini; G., Bisognin; Marina, Berti
Visita ispettiva annuale di sorveglianza Accredia 1-gen-2010 Iacob, Erica; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario; Vanzetti, Lia Emanuela
Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon 1-gen-2010 Pepponi, Giancarlo; Giubertoni, Damiano; Bersani, Massimo; Meirer, Florian; D., Ingerle; G., Steinhauser; C., Streli; P., Hoenicke; B., Beckhoff
A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers 1-gen-2010 D., Ingerle; Meirer, Florian; N., Zoeger; Pepponi, Giancarlo; Giubertoni, Damiano; G., Steinhauser; P., Wobrauschek; C., Streli
Non-melting annealing of silicon by CO2 laser 1-gen-2010 A., Florakis; E., Verrelli; Giubertoni, Damiano; G., Tzortzis; D., Tsoukalas
Ultralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques 1-gen-2010 Giubertoni, Damiano; Iacob, Erica; P., Hoenicke; B., Beckhoff; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo
Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment 1-gen-2010 Giubertoni, Damiano; Pepponi, Giancarlo; Mehmet Alper, Sahiner; Stephen P., Kelty; Gennaro, Salvatore; Bersani, Massimo; Max, Kah; Karen J., Kirkby; Roisin, Doherty; Majeed A., Foad; Meirer, Florian; C., Streli; Joseph C., Woicik; Piero, Pianetta
Depth profile characterization of ultra shallow junction implants 1-gen-2010 Philipp, Hönicke; Burkhard, Beckhoff; Michael, Kolbe; Giubertoni, Damiano; Jaap van den, Berg; Pepponi, Giancarlo
Development of nano-roughness under SIMS ion sputtering of Germanium surfaces 1-gen-2011 Iacob, Erica; Barozzi, Mario; Demenev, Evgeny; Gennaro, Salvatore; Giubertoni, Damiano; Bersani, Massimo
Mostrati risultati da 101 a 120 di 206
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