Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator

Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.