Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte di FBK.
Titolo: | Optimal preamorphization conditions for the formation of highly activated ultra shallow junctions in Silicon-On-Insulator |
Autori: | |
Data di pubblicazione: | 2006 |
Abstract: | Preamorphising implants (PAI) in Silicon-on-insulator (SOI) compared with bulk silicon substrates have been shown to improve junction properties. This paper studies the optimization of electrical behavior of this process in SOI. We will show that the deactivation caused by end-of-range (EOR) defects is vastly reduced in SOI by positioning the EOR band as close as possible to the buried oxide (BOX) interface while still allowing crystal regrowth to occur. Results show a 3% deactivation in SOI compared to 10% in bulk Si. |
Handle: | http://hdl.handle.net/11582/3795 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.