The current and future telecommunication standards are experiencing a constant increase in terms of connected devices, expected communication performances and supported services and networks. The growing concern regarding the sustainability of such infrastructures reflects on their massive Multiple-Input-Multiple-Output (mMIMO) access points. Among the passive electronic solutions for their beamforming (BF) architecture, Radio Frequency Micro-Electromechanical Systems (RF-MEMS) represent a viable candidate to realize low-power, miniaturized, and broadband high-performance components and systems. Such potential is outlined in this paper by a Single-Pole-Double-Throw (SPDT) switch, a 3-bit attenuator and three concepts of phase-shifting cells, all relying on low-voltage bias (7 V) and operating in the 5G N258 band (24.25−27.5GHz). The presented devices could find applications in current BF networks, and upon a proper monolithic integration, they could be the building blocks of future high-performance multi-functional passive networks for such applications.

RF-MEMS as a Key Enabling Technology of 6G and Future Networks mMIMO Beamforming Architectures

Girolamo Tagliapietra;Koushik Guha;Jacopo Iannacci
Writing – Original Draft Preparation
2026-01-01

Abstract

The current and future telecommunication standards are experiencing a constant increase in terms of connected devices, expected communication performances and supported services and networks. The growing concern regarding the sustainability of such infrastructures reflects on their massive Multiple-Input-Multiple-Output (mMIMO) access points. Among the passive electronic solutions for their beamforming (BF) architecture, Radio Frequency Micro-Electromechanical Systems (RF-MEMS) represent a viable candidate to realize low-power, miniaturized, and broadband high-performance components and systems. Such potential is outlined in this paper by a Single-Pole-Double-Throw (SPDT) switch, a 3-bit attenuator and three concepts of phase-shifting cells, all relying on low-voltage bias (7 V) and operating in the 5G N258 band (24.25−27.5GHz). The presented devices could find applications in current BF networks, and upon a proper monolithic integration, they could be the building blocks of future high-performance multi-functional passive networks for such applications.
2026
979-8-3315-3722-7
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/369047
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