Designing and analyzing a novel RF MEMS (Radio Frequency Micro-Electro-Mechanical Systems) switch for smart sensors and IoT (Internet of Things) applications offer a range of advantages that can significantly enhance the performance, efficiency, and reliability of smart sensors and IoT devices. Therefore, in this paper, a novel RF MEMS series capacitive switch for IoT and smart sensor applications, especially focusing on low actuation voltage design is proposed. Achieving low pullin voltage while maintaining excellent RF characteristics is essential for reducing power consumption, improving energy efficiency, and ensuring reliable and efficient operation in IoT and smart sensor applications. Therefore, the discrepancy between the actuation voltage derived from optimization (6.5 V for a 0.5μ m beam thickness). A return loss of 15 dB and an insertion loss of 0.198 dB are achieve S-parameter results for the proposed RF MEMS switch. These parameters are vital indicators of the switch's performance in practical applications. Additionally, an isolation value of -70 dB is achieved and indicates excellent performance of the proposed RF MEMS switch.

Design and Analysis of Novel RF MEMS Switch for Smart Sensors and IoT Applications

Koushik Guha;Jacopo Iannacci
Writing – Review & Editing
2026-01-01

Abstract

Designing and analyzing a novel RF MEMS (Radio Frequency Micro-Electro-Mechanical Systems) switch for smart sensors and IoT (Internet of Things) applications offer a range of advantages that can significantly enhance the performance, efficiency, and reliability of smart sensors and IoT devices. Therefore, in this paper, a novel RF MEMS series capacitive switch for IoT and smart sensor applications, especially focusing on low actuation voltage design is proposed. Achieving low pullin voltage while maintaining excellent RF characteristics is essential for reducing power consumption, improving energy efficiency, and ensuring reliable and efficient operation in IoT and smart sensor applications. Therefore, the discrepancy between the actuation voltage derived from optimization (6.5 V for a 0.5μ m beam thickness). A return loss of 15 dB and an insertion loss of 0.198 dB are achieve S-parameter results for the proposed RF MEMS switch. These parameters are vital indicators of the switch's performance in practical applications. Additionally, an isolation value of -70 dB is achieved and indicates excellent performance of the proposed RF MEMS switch.
2026
979-8-3315-3722-7
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/369009
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