Design and Analysis of Dual Metal Control Gate Charge Plasma Tunnel Field-Effect Transistor (TFET) with Gate Engineering to Enhance Radio Frequency (RF) Performance and Linearity

The paper presents the design of dual material controlled gate charge-plasma-based tunneling Field-effect transistor (DMCG-CPTFET) for enhancement of radio frequency (RF) parameters, and linearity performance parameters are analyzed to overcome the difficulty and reduce the cost of nanoscale devices. This proposed device eliminates issues related to doping control, simplifying the fabrication process. In DMCG-CPTFET, the p + type source and n + type drain areas are formed by depositing platinum with work function = 5.93 eV and hafnium with work function = 3.9 eV materials on the silicon substrate, respectively. Auxiliary gate (M3), control gate (M2), and tunneling gate (M1), which have the work functions as φ1, φ2, and φ3, respectively, are the three gate segments in the DMCG-CPTFET. In this paper, we have looked into three alternative work function pairings to accomplish improved radio frequency (RF) and linearity performance metrics and compared the proposed device with the conventional device for better drain current and I on values.