Aim of this work was the study of the best sputtering experimental conditions to optimize the depth resolution Δz, and the interface width, z, in the AES (Auger Electron Spectroscopy) depth profiling analysis of multilayer films. PVD (Physical Vapor Deposition) and PACVD (Plasma Assisted Chemical Vapor Deposition) processes were used in alternate order to deposit, on a Silicon substrate, nanometer-thick carbon films consisting of 2, 4, 8, 16, 32 layers with a diamond-like and a polymeric structure, respectively. During the PACVD process, Nitrogen gas was introduced as a marker element. The thickness of the layers has been reduced when increasing the number of layers in order to approximately maintain the same total thickness of the films. AES depth profiling was performed with a differentially pumped Ar ion gun. The incident angle and energy of the Ar ion beam has been changed to investigate their effect on the profile depth resolution. In particular the angle of incidence was varied from 28 to 68 degrees, while the ion energy was changed in the range 1-4 KeV. A quantification of CKLL, NKLL, SiLMM and OKLL has been carried out, applying the manufacturer’s relative sensitivity factors, and the results plotted as a function of the sample thickness. The best performances were obtained at grazing angle (28 degrees) and setting the Ar ion energy at 2KeV, enabling an excellent resolution of the layered structure up to 16 layers. Good results were also obtained with the 32-layered films, even if the resolution becomes worse when approaching the substrate.
Auger Depth Profiling optimization on plasma-deposited carbon multilayers
Micheli, Victor;Bensaada Laidani, Nadhira;Bartali, Ruben;Gottardi, Gloria;Anderle, Mariano
2005-01-01
Abstract
Aim of this work was the study of the best sputtering experimental conditions to optimize the depth resolution Δz, and the interface width, z, in the AES (Auger Electron Spectroscopy) depth profiling analysis of multilayer films. PVD (Physical Vapor Deposition) and PACVD (Plasma Assisted Chemical Vapor Deposition) processes were used in alternate order to deposit, on a Silicon substrate, nanometer-thick carbon films consisting of 2, 4, 8, 16, 32 layers with a diamond-like and a polymeric structure, respectively. During the PACVD process, Nitrogen gas was introduced as a marker element. The thickness of the layers has been reduced when increasing the number of layers in order to approximately maintain the same total thickness of the films. AES depth profiling was performed with a differentially pumped Ar ion gun. The incident angle and energy of the Ar ion beam has been changed to investigate their effect on the profile depth resolution. In particular the angle of incidence was varied from 28 to 68 degrees, while the ion energy was changed in the range 1-4 KeV. A quantification of CKLL, NKLL, SiLMM and OKLL has been carried out, applying the manufacturer’s relative sensitivity factors, and the results plotted as a function of the sample thickness. The best performances were obtained at grazing angle (28 degrees) and setting the Ar ion energy at 2KeV, enabling an excellent resolution of the layered structure up to 16 layers. Good results were also obtained with the 32-layered films, even if the resolution becomes worse when approaching the substrate.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
