We report on the monolithic integration of a photonic integrated circuit with silicon photodetectors embedded in the substrate. We characterized photodiodes as linear detectors in inverse bias regime and investigated the implementation of avalanche photodiodes as room-temperature single-photon detectors around 850nm of wavelength using the same technology.

Monolithic integration of photonic integrated circuits with silicon photodiodes

M. Bernard;F. Acerbi;M. Ghulinyan
2022-01-01

Abstract

We report on the monolithic integration of a photonic integrated circuit with silicon photodetectors embedded in the substrate. We characterized photodiodes as linear detectors in inverse bias regime and investigated the implementation of avalanche photodiodes as room-temperature single-photon detectors around 850nm of wavelength using the same technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/335927
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