We report on the monolithic integration of a photonic integrated circuit with silicon photodetectors embedded in the substrate. We characterized photodiodes as linear detectors in inverse bias regime and investigated the implementation of avalanche photodiodes as room-temperature single-photon detectors around 850nm of wavelength using the same technology.
Monolithic integration of photonic integrated circuits with silicon photodiodes
M. Bernard;F. Acerbi;M. Ghulinyan
2022-01-01
Abstract
We report on the monolithic integration of a photonic integrated circuit with silicon photodetectors embedded in the substrate. We characterized photodiodes as linear detectors in inverse bias regime and investigated the implementation of avalanche photodiodes as room-temperature single-photon detectors around 850nm of wavelength using the same technology.File in questo prodotto:
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Bernard et al. - 2022 - Monolithic integration of photonic integrated circ.pdf
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