Germanium has been deeply studied as an alternative to silicon as semiconductor material in microelectronics. Other interesting applications are in optoelectronics, photovoltaics and ion batteries. All these applications can gain new functionalities by the nanostructuration of the Ge itself. In this study, EBL and FIB techniques were used to force the formation of the nanotubes constrained in the resist. Offer interesting perspectives of application in semiconductor nanotechnology and an interesting platform to suspended nano-membranes.

Germanium nanopillars growth by confined gold ion implantation by FIB

Alessandro Cian;Damiano Giubertoni;Lorenza Ferrario
2022-01-01

Abstract

Germanium has been deeply studied as an alternative to silicon as semiconductor material in microelectronics. Other interesting applications are in optoelectronics, photovoltaics and ion batteries. All these applications can gain new functionalities by the nanostructuration of the Ge itself. In this study, EBL and FIB techniques were used to force the formation of the nanotubes constrained in the resist. Offer interesting perspectives of application in semiconductor nanotechnology and an interesting platform to suspended nano-membranes.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/335924
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