The development of FIB columns equipped with liquid metal alloy ion sources (LMAIS) is opening new opportunities for FIB-based processing, allowing to work with more than one ion species compared to the usual Ga+ [1]. In this work, we report on the use of focused Au+, Au++ and Ge+ ion implantation for nanolithography on silicon, with the goal to investigate the advantages of using other species instead of Ga+ FIB for the fabrication of nanomechanical devices.

Nanolithography on Silicon by FIB using Au and Ge as ion beam species

Alessandro Cian;alvise Bagolini;Damiano Giubertoni;
2022-01-01

Abstract

The development of FIB columns equipped with liquid metal alloy ion sources (LMAIS) is opening new opportunities for FIB-based processing, allowing to work with more than one ion species compared to the usual Ga+ [1]. In this work, we report on the use of focused Au+, Au++ and Ge+ ion implantation for nanolithography on silicon, with the goal to investigate the advantages of using other species instead of Ga+ FIB for the fabrication of nanomechanical devices.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/335922
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