The development of FIB columns equipped with liquid metal alloy ion sources (LMAIS) is opening new opportunities for FIB-based processing, allowing to work with more than one ion species compared to the usual Ga+ [1]. In this work, we report on the use of focused Au+, Au++ and Ge+ ion implantation for nanolithography on silicon, with the goal to investigate the advantages of using other species instead of Ga+ FIB for the fabrication of nanomechanical devices.
Nanolithography on Silicon by FIB using Au and Ge as ion beam species
Alessandro Cian;alvise Bagolini;Damiano Giubertoni;
2022-01-01
Abstract
The development of FIB columns equipped with liquid metal alloy ion sources (LMAIS) is opening new opportunities for FIB-based processing, allowing to work with more than one ion species compared to the usual Ga+ [1]. In this work, we report on the use of focused Au+, Au++ and Ge+ ion implantation for nanolithography on silicon, with the goal to investigate the advantages of using other species instead of Ga+ FIB for the fabrication of nanomechanical devices.File in questo prodotto:
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