An overview of the Ion Sensitive Field Effect Transistor (ISFET) basic principles and fabrication technology, mainly with reference to devices currently under development at IRST Microelectronics Division is presented.
Ion sensitive field effect transistors: basic principles and fabrication technology
Soncini, Giovanni;Lui, Alberto;Margesin, Benno;Zanini, Vittorio;Zen, Mario
1995-01-01
Abstract
An overview of the Ion Sensitive Field Effect Transistor (ISFET) basic principles and fabrication technology, mainly with reference to devices currently under development at IRST Microelectronics Division is presented.File in questo prodotto:
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