In this paper, we present lab characterization results of various test structures for 3D sensors manufactured at FBK and SINTEF, before and after proton and gamma irradiation. Measurements of various devices, such as MOS capacitors, planar and 3D diodes, for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors are presented. Various parameters like surface recombination velocity, generation lifetime, oxide charge density and interface trap density are extracted to understand device behavior. Current measurements as a function of temperature are performed to understand the different mechanisms contributing to leakage current, especially after heavy irradiation. Test structures from current CMS pixel detector are also measured for comparison.

Characterization of Surface and Bulk Properties of 3D Sensors after Heavy Irradiation

Dalla Betta, Gian Franco;Povoli, Marco;R. Mendicino;Boscardin, Maurizio;Giacomini, Gabriele;Mattedi, Francesca;Zorzi, Nicola
2014

Abstract

In this paper, we present lab characterization results of various test structures for 3D sensors manufactured at FBK and SINTEF, before and after proton and gamma irradiation. Measurements of various devices, such as MOS capacitors, planar and 3D diodes, for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors are presented. Various parameters like surface recombination velocity, generation lifetime, oxide charge density and interface trap density are extracted to understand device behavior. Current measurements as a function of temperature are performed to understand the different mechanisms contributing to leakage current, especially after heavy irradiation. Test structures from current CMS pixel detector are also measured for comparison.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/261430
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