Optoelettronica Italia Srl, better known as Optoi, is an Italian Company dealing with optoelectronics and microelectronics and focusing on back-end technologies. The growing volume of activities concerning the aerospace field has recently brought to the creation of a company unit, with collaborations with ESA, CNES and ASI. In this context, Optoi’s key partner for the microelectronic front-end is Fondazione Bruno Kessler (FBK) and specifically its Micro Nano Facility (MNF). In 2006, a first development for CNES centred on an 8-channel monolithic silicon phototransistor array for aerospace optical encoders was initiated. In the two subsequent R&D projects in 2008 and 2009 [2, 3, 4], Optoi’s activity has gradually covered not only the manufacturing of the silicon devices, but also their packaging, successfully assessing its technology with respect to space-related requirements. These achievements were considered encouraging, based on the fact that no European source was available, for a potential usage of that component typology by space European optical encoder manufacturers. More recently, a new project for ESA started in early November 2011, following Optoi’s proposal on an open invitation to tender published earlier in the same year. This activity was funded in the framework of the European Component Initiative (Phase 3), for the development and ESCC approval of an European source of a 8-channel monolithic silicon phototransistor array for optical encoders, targeting its inclusion into the European Preferred Part List (EPPL) based on a complete radiation campaign and subsequent ESCC evaluation. This paper reports the main aspects on the manufacture of the component, together with the most representative electro-optical performances, mainly focusing on the results recently collected in a complete radiation campaign. Besides, the details of the upcoming Evaluation Test Plan and the activities of the parallel development of a hermetic device variant are presented.

Development and escc evaluation of a monolithic silicon phototransistor array for optical encoders

Collini, Amos;Ficorella, Francesco;Giacomini, Gabriele;Bellutti, Pierluigi;
2014

Abstract

Optoelettronica Italia Srl, better known as Optoi, is an Italian Company dealing with optoelectronics and microelectronics and focusing on back-end technologies. The growing volume of activities concerning the aerospace field has recently brought to the creation of a company unit, with collaborations with ESA, CNES and ASI. In this context, Optoi’s key partner for the microelectronic front-end is Fondazione Bruno Kessler (FBK) and specifically its Micro Nano Facility (MNF). In 2006, a first development for CNES centred on an 8-channel monolithic silicon phototransistor array for aerospace optical encoders was initiated. In the two subsequent R&D projects in 2008 and 2009 [2, 3, 4], Optoi’s activity has gradually covered not only the manufacturing of the silicon devices, but also their packaging, successfully assessing its technology with respect to space-related requirements. These achievements were considered encouraging, based on the fact that no European source was available, for a potential usage of that component typology by space European optical encoder manufacturers. More recently, a new project for ESA started in early November 2011, following Optoi’s proposal on an open invitation to tender published earlier in the same year. This activity was funded in the framework of the European Component Initiative (Phase 3), for the development and ESCC approval of an European source of a 8-channel monolithic silicon phototransistor array for optical encoders, targeting its inclusion into the European Preferred Part List (EPPL) based on a complete radiation campaign and subsequent ESCC evaluation. This paper reports the main aspects on the manufacture of the component, together with the most representative electro-optical performances, mainly focusing on the results recently collected in a complete radiation campaign. Besides, the details of the upcoming Evaluation Test Plan and the activities of the parallel development of a hermetic device variant are presented.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/258822
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