Two kind of Si epitaxial wafers, p/p+ with extrinsic gettering and p/p- without extrinsic gettering were used to evaluate the impact of Fe contamination on minority carrier generation lifetime, effective surface generation velocity and gate oxide quality. Apreciable differences, as related to the Fe contamination, have been observed in the p/p-without extrinsic gettering substrates only.
MOS C-t characteristics and gate oxide quality versus bulk iron contamination in epitaxial wafers
Bellutti, Pierluigi;Collini, Amos;Zorzi, Nicola;
1997-01-01
Abstract
Two kind of Si epitaxial wafers, p/p+ with extrinsic gettering and p/p- without extrinsic gettering were used to evaluate the impact of Fe contamination on minority carrier generation lifetime, effective surface generation velocity and gate oxide quality. Apreciable differences, as related to the Fe contamination, have been observed in the p/p-without extrinsic gettering substrates only.File in questo prodotto:
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