Two kind of Si epitaxial wafers, p/p+ with extrinsic gettering and p/p- without extrinsic gettering were used to evaluate the impact of Fe contamination on minority carrier generation lifetime, effective surface generation velocity and gate oxide quality. Apreciable differences, as related to the Fe contamination, have been observed in the p/p-without extrinsic gettering substrates only.

MOS C-t characteristics and gate oxide quality versus bulk iron contamination in epitaxial wafers

Bellutti, Pierluigi;Collini, Amos;Zorzi, Nicola;
1997-01-01

Abstract

Two kind of Si epitaxial wafers, p/p+ with extrinsic gettering and p/p- without extrinsic gettering were used to evaluate the impact of Fe contamination on minority carrier generation lifetime, effective surface generation velocity and gate oxide quality. Apreciable differences, as related to the Fe contamination, have been observed in the p/p-without extrinsic gettering substrates only.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/243
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